Energy Spectrum and Properties of SiC: Using Two-Photon Absorption for Different Harmonics

Abstract

This paper describes a methodology for studying the energy spectrum and characteristics of Silicon Carbide (SiC) semiconductor materials, utilizing various harmonics for two-photon absorption (TPA). The approach involves developing theoretical models to simulate the energy levels and transitions of SiC, based on the TPA process. By analyzing the resulting spectra obtained by varying the harmonic order, the energy spectrum, and properties of SiC are explored. In this work also includes a comparison of the energy spectrum and properties of SiC for single and two-photon absorption, providing insights into the distinctive features of SiC under these conditions. In particularly absorption co-efficient of the material was calculated from optical transmittance and reflectance measurements at room temperature (300 K) in the wavelength range of 200 -900 nm. In addition, Gaussian functions centered at different energies were modeled using TPA in SiC materials and their contribution to the Harmonic Generation (HG) signal was calculated.